Electroactive and electroinactive dopants in Bi2Te3 and their interaction with antisite defectsCHIZHEVSKAYA, S. N; SHELIMOVA, L. E.Inorganic materials. 1995, Vol 31, Num 9, pp 1083-1095, issn 0020-1685Article

Schichtkristalle Bi₂Te₃ und Sb₂Te₃ ― Punktdefekte, Bindungspolarität und einige Transporteigenschaften = Mixed crystals Bi₂Te₃ and Sb₂Te₃. Point defects, bond polarity and some transport propertiesSTARY, Z; HORAK, J.Berichte der Bunsengesellschaft für Physikalische Chemie. 1989, Vol 93, Num 11, pp 1231-1234, issn 0005-9021, 4 p.Conference Paper

On the meaning of effective formation entropies for atomic defects in ordered compoundsFÄHNLE, M; BESTER, G; MEYER, B et al.Scripta materialia. 1998, Vol 39, Num 8, pp 1071-1075, issn 1359-6462Article

Point defect study of CuTi and CuTi₂SHOEMAKER, J. R; LUTTON, R. T; WESLEY, D et al.Journal of materials research. 1991, Vol 6, Num 3, pp 473-482, issn 0884-2914Article

Interaction of anti-site defects with Ge impurity atoms in Sb₂Te₃ single crystalsSTARY, Z; BENES, L; HORAK, J et al.Physica status solidi. A. Applied research. 1988, Vol 109, Num 1, pp 93-99, issn 0031-8965Article

Defects in semiconductors : Some fatal, some vital : Control and use of defects in materialsQUEISSER, H. J; HALLER, E. E.Science (Washington, D.C.). 1998, Vol 281, Num 5379, pp 945-950, issn 0036-8075Article

Migration frequencies for complex diffusion pathsBIRNIE, D. P.The Journal of physics and chemistry of solids. 1990, Vol 51, Num 11, pp 1313-1321, issn 0022-3697, 9 p.Article

Determination of modified embedded atom method parameters for nickelBASKES, M. I.Materials chemistry and physics. 1997, Vol 50, Num 2, pp 152-158, issn 0254-0584Article

Deep antisite-complex levels in Hg_1-xCd_xTeHANKE, M; HENNIG, D; KASCHTE, A et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1990, Vol 8, Num 5, pp 1148-1151, issn 0734-211XArticle

Anisotropy of the selenium diffusion coefficient in bismuth tellurideCHITROUB, M; SCHERRER, S; SCHERRER, H et al.The Journal of physics and chemistry of solids. 2000, Vol 61, Num 10, pp 1693-1701, issn 0022-3697Article

Hopping conduction in molecular beam epitaxial GaAs grown at very low temperaturesLOOK, D. C; FANG, Z.-Q; LOOK, J. W et al.Journal of the Electrochemical Society. 1994, Vol 141, Num 3, pp 747-750, issn 0013-4651Article

Submillimeter EPR evidence for the As antisite defect in GaAsWAGNER, R. J; KREBS, J. J; STAUSS, G. H et al.Solid state communications. 1993, Vol 88, Num 11-12, pp 887-889, issn 0038-1098Article

Applicability of NMR to impurities detection in YIG thin filmsSTEPANKOVA, H; NOVAK, P; ENGLICH, J et al.Journal of magnetism and magnetic materials. 1999, Vol 196-97, pp 412-414, issn 0304-8853Conference Paper

Characteristics and thermal stability of ruthenium/p-GaAs Schottky contactsWAGENER, M. C; BOTHA, J. R; LEITCH, A. W. R et al.Semiconductor science and technology. 1999, Vol 14, Num 12, pp 1080-1083, issn 0268-1242Article

Generation of F centres and hole centres in the nonstoichiometric x-ray storage phosphor BaFBrSCHWEIZER, S; SPAETH, J.-M; BASTOW, T. J et al.Journal of physics. Condensed matter (Print). 1998, Vol 10, Num 40, pp 9111-9122, issn 0953-8984Article

Point defects and chemical potentials in ordered alloysHAGEN, M; FINNIS, M. W.Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties. 1998, Vol 77, Num 2, pp 447-464, issn 1364-2804Article

Studies of orderable compounds with high defect concentrations using a molecular dynamics techniqueDEGTYARENKO, N. N; ELESIN, V. F.Physics of metals and metallography. 1996, Vol 81, Num 4, pp 393-397, issn 0031-918XArticle

Defects in yttrium-iron garnet studied by NMR on iron nucleiWAGNER, K; LÜTGEMEIER, H; ZINN, W et al.Journal of magnetism and magnetic materials. 1995, Vol 140-44, Num 3, pp 2107-2108, issn 0304-8853Conference Paper

Thermodynamic determination of the homogeneity range of indium arsenideGONCHAROV, E. G; SUSHKOVA, T. P; SEMENOVA, G. V et al.Russian journal of inorganic chemistry. 1993, Vol 38, Num 3, pp 376-378, issn 0036-0236Article

New As_Ga related center in GaAsLOOK, D. C; FANG, Z.-Q; SIZELOVE, J. R et al.Physical review letters. 1993, Vol 70, Num 4, pp 465-468, issn 0031-9007Article

Relaxation and bond breaking at defect sites on GaP(110) surfaces by phonon-assisted multihole localizationKHOO, G. S; ONG, C. K; ITOH, N et al.Physical review. B, Condensed matter. 1993, Vol 47, Num 4, pp 2031-2037, issn 0163-1829Article

Identification of the Bi_Ga heteroantisite defect in GaAs:BiKUNZER, M; JOST, W; KAUFMANN, U et al.Physical review. B, Condensed matter. 1993, Vol 48, Num 7, pp 4437-4441, issn 0163-1829Article

Raman study of low growth temperature GaAsGANT, T. A; SHEN, H; FLEMISH, J. R et al.Applied physics letters. 1992, Vol 60, Num 12, pp 1453-1455, issn 0003-6951Article

Etude des défauts intrinsèques dans l'arséniure de gallium = Study of intrinsic defects in gallium arsenideJia, Yongqiang; Von Bardeleben, H. Jurgen.1992, 110 p.Thesis

Investigation of Se⁺-implanted GaAs layers by temperature-dependent dechannelingBACHMANN, T; WESCH, W; GARTNER, K et al.Journal of applied physics. 1991, Vol 69, Num 12, pp 8072-8075, issn 0021-8979Article